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INTEGRATED CIRCUITS
DATA SHEET
PCF5078 Power amplifier controller for GSM and PCN systems
Product specification File under Integrated Circuits, IC17 1999 Apr 12
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
FEATURES * Compatible with baseband interface family PCF5073x * Two power sensor inputs * Temperature compensation of sensor signal * Active filter for DAC input * Power Amplifier (PA) protection against mismatching * Bias current source for detector diodes * Generation of pre-bias level for PA at start of burst (home position) * Possibility to adapt home position by external components * Applicable for a wide range of silicon and GaAs power amplifiers. QUICK REFERENCE DATA SYMBOL VDD IDD(tot) Tamb supply voltage total supply current operating ambient temperature PARAMETER - -40 MIN. 2.4 - - TYP. 3.6 6 GENERAL DESCRIPTION APPLICATIONS
PCF5078
* Global System for Mobile communication (GSM) * Personal Communications Network (PCN) systems.
This CMOS device integrates an amplifier for the detected RF voltage from the sensor, an integrator and an active filter to build a PA control loop for cellular systems with a small amount of passive components.
MAX. 5.0 +85
UNIT V mA C
ORDERING INFORMATION TYPE NUMBER PCF5078T PACKAGE NAME DESCRIPTION VERSION SOT505-1
TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3.0 mm
1999 Apr 12
2
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
BLOCK DIAGRAM
PCF5078
handbook, full pagewidth
antenna sensor RF PA
D1
D2 VINT VS2 4 VS1 3 S1 C4 S2 C1 6 pF C2 6 pF R6 30 A VDD 30 A VDD R3 C3 5 pF 5 VSS 6 VDAC VHOME 7 8
MGS193
VC 2 1
R2 1 k
10 pF S5 OP1 R1 20 k
PCF5078
S4
OP4 S3
VDD 10 A Vprebias
15 k VDD 10 A Vhome VDAC VDD
R4 6 k
S1 S2 S3 S4 S5 CONTROL LOGIC
50 k
VDD
AUXDAC3
PCF5073x
Fig.1 Block diagram.
1999 Apr 12
3
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
PINNING SYMBOL VC VINT VS1 VS2 VSS VDAC VHOME VDD PIN 1 2 3 4 5 6 7 8 DESCRIPTION PA control output voltage negative integrator input sensor signal input 1 sensor signal input 2 ground supply DAC input voltage home position input voltage supply voltage
PCF5078
An external Digital-to-Analog Converter (DAC) with10-bit resolution is necessary to control the loop e.g. the AUXDAC3 of the baseband interface family PCF5073x. An integrated active filter smooths the voltage steps of the DAC and avoids a feedthrough of the DAC harmonics into the modulation spectra of the PA. The DAC signal and the sensor signal are added by operational amplifier OP1. The voltage difference of both signals is integrated by operational amplifier OP4, which provides the PA control voltage on pin VC. The integration is performed by means of an external capacitance CVINT connected between pins VINT and VC. The shape of the rising and falling power burst edges can be determined by means of the DAC voltage (see Fig.3). Power-down mode
handbook, halfpage
VC 1 VINT 2
8 VDD 7 VHOME VDAC VSS
PCF5078
VS1 3 VS2 4
MGS194
During the not used time slots in Time Division Multiple Access (TDMA) systems, the PCF5078 must be turned off by switching off the supply voltage on pin VDD. Initial conditions and start-up The PCF5078 has been designed to operate in bursts as required in TDMA systems. For each time slot to be transmitted it must be powered-up by switching on the supply voltage. This allows a proper initialization of switches S1 to S5. During start-up switches S1, S2 and S3 are closed and switches S4 and S5 are opened (see Fig.4). The forward voltages on the Schottky diodes are sampled on capacitors C1 and C2, respectively, because switch S1 is closed. Moreover, the control voltage on pin VC is initially forced to pre-bias level Vprebias because switches S2 and S3 are closed and switch S4 is opened. Switch S1 is opened after a fixed time the supply voltage has been switched on and then the circuit is ready. This time is defined on-chip and can be maximum 45 s. Once switch S1 is open, a ramp signal with a minimum amplitude of 25 mV applied on pin VDAC determines opening of switch S3 and closing of switch S4 with a delay of maximum 3 s with respect to the start of the ramp. After opening switch S3, the control voltage on pin VC rises in a fixed amount of time to the home position level so biasing the PA to the beginning of the active range of its control curve. Switch S2 remains closed during this typical time of 2 s. When switch S2 is opened, switch S5 is closed allowing the transfer of any signal coming from amplifier OP1.
6 5
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION General The PCF5078 integrates an amplifier for the detected RF voltage from the sensor, an integrator and an active filter to build a PA control loop with a small amount of passive components. The sensor amplifier is able to amplify signals from a RF power detector in a range of -20 to +15 dBm. This complies to the PA output power range of GSM and PCN systems when a directional coupler with 20 dB attenuation is used. The Schottky diode for power detection (sensor) is biased by an integrated current source of 30 A. Variations of the forward voltage of the diodes with the temperature have no influence on the measured signal, because they are cancelled by sampling around the switched capacitor operational amplifier OP1 (see Fig.1).
1999 Apr 12
4
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
After this preset, the control voltage is free to increase according to the control loop if RF input is present (see Fig.3). For higher DAC ramp steps the delay time of opening switch S3 (and closing switch S4) is reduced. On the contrary, the delay time between opening switch S2 with respect to opening switch S3 (and closing switch S4) remains unchanged. For a correct start-up it is required that the rising time of the supply voltage is maximum 20 s. End of a burst For a proper down ramp, the final value of the DAC input voltage should be below the value at the beginning of the burst and so be able to really shut-off the PA (see Fig.5). This means the code programmed for the last bit of the DAC down ramp (CODEEND) has to be lower than the initial value of the up ramp (CODESTART). Moreover, the last code must be maintained until the supply voltage has been switched off. When the voltage on pin VC is detected to be lower than VVHOME a built-in mechanism forces the voltage on pin VC to Vprebias by closing switches S1, S2 and S3 and by opening switches S4 and S5. For proper operation, the supply voltage should be switched off at least 15 s later with respect to the end of the down ramp on pin VDAC. PA protection against mismatching
PCF5078
A second sensor amplified input is integrated into the PCF5078 for measuring the reflected wave of the directional coupler. The signal is added to the measured RF power signal (see Fig.3). When mismatching at the output of the PA occurs the power is reduced. A high Voltage Standing Wave Ratio (VSWR) at the output of the PA often occurs in systems where the PA is connected to the antenna via switches with low attenuation instead of using a duplex filter. Home position voltage A forward voltage of an on-chip silicon diode is provided as the default home position voltage Vhome. This voltage matches the requirements at the control input of most PAs and exhibits the same temperature coefficient. However, if another value is needed for a certain PA the level can be adjusted by connecting external components to pin VHOME (see Figs 10 and 11). The home position voltage can be set between 200 and 1000 mV when using a capacitor of 50 pF connected between pins VINT and VC.
1999 Apr 12
5
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
PCF5078
handbook, full pagewidth
RFout (dBc)
0 -10 -20 -30 -40 -50 -60 -70 -80 -28 -18 -10 0 +543 +553 +561 +571
time (s)
VVDAC <0.9VDD
CODESTART 0 VVC <0.9VDD 2 4 6 8 10 12 14 16
CODEEND 16 18 20 22 24 26 28 30 32 DAC bits at 560 kHz
Vprebias 0 2 4 6 8 10 12 14 16 16 18 20 22 24 26 28 30 32 DAC bits at 560 kHz
VDD time RFin time >45 s >15 s
MGS197
Fig.3 Timing diagram.
1999 Apr 12
6
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
PCF5078
handbook, full pagewidth
VDD
<20 s VVDAC >25 s
time
CODESTART
>25 mV 0 <45 s <3 s 2 4 6... DAC bits at 560 kHz
closed S1 opened
time
closed S3 opened
time
closed S4 opened time closed S2 opened time closed S5 opened 2 s VVC time
VVHOME Vprebias
MGS195
time
Fig.4 Initialization and start of a burst diagram.
1999 Apr 12
7
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
PCF5078
handbook, full pagewidth
VDD
time VVDAC
CODEEND < CODESTART . . . 26 closed S1, S2, S3 opened time closed S4, S5 opened time <12 s VVC 28 30 32 15 s DAC bits at 560 kHz
VVHOME Vprebias time
MGS196
Fig.5 End of a burst diagram.
1999 Apr 12
8
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDD Vn supply voltage DC voltage on pins VS2 and VS2 all other pins In Ptot Tstg Tamb DC current on any signal pin total power dissipation storage temperature operating ambient temperature -3.0 -0.5 -10 - -65 -40 +6.0 +6.0 +10 315 +150 +85 PARAMETER 2.4 MIN. 6.0
PCF5078
MAX.
UNIT V V V mA mW C C
CHARACTERISTICS VDD = 2.4 to 5 V; Tamb = -40 to +85 C; see Fig.1; unless otherwise specified. SYMBOL Supply VDD IDD(tot) VI(n) Ibias supply voltage total supply current 2.4 - -3 3.6 - - 5.0 6 V mA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Sensor input voltage input voltage on pins VS1 and VS2 VDD V
Bias current source detector diode bias current no input signal; Tamb = 25 C; see Fig.7 VDD = 2.4 V VDD = 5.0 V TCbias temperature coefficient of bias current source Tamb = 25 C 17 21 - 28 33 0.07 39 45 - A A A/K
Home position voltage Vhome TChome R3 VI(VHOME) f3dB internal home position voltage temperature coefficient of internal home position voltage source resistor for internal home position voltage home position input voltage corner frequency 0.550 - - 200 70 0.600 -2.1 50 - 100 0.650 - - 1000(1) 130 V mV/K k mV kHz
Low pass filter for DAC signal (3rd-order Bessel)
1999 Apr 12
9
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
SYMBOL Integrator (OP4) BG PSRR SRpos SRneg VO(min) VO(max) M Notes 1. For CVINT = 50 pF. 2. Guaranteed by design. gain bandwidth power supply rejection ratio positive slew rate negative slew rate minimum output voltage maximum output voltage matching ratio accuracy between capacitances CL = 120 pF; note 2 at 217 Hz; VDD = 3 V; note 2 VDD = 3 V; note 3 VDD = 3 V; note 3 RL = 700 ; see Fig.6 - 50 3.5 3.5 4 55 4.5 4.5 - PARAMETER CONDITIONS MIN. TYP.
PCF5078
MAX. - - - - 0.2 - -
UNIT
MHz dB V/s V/s V V %
Tamb = 25 C; see Fig.8 -
0.85VDD - - 1
Capacitors C1, C2, C3 and C4
3. Slew rates are measured between 10% and 90% of output voltage level with an load of approximately 40 pF to ground.
handbook, halfpage
6.5
MGS200
handbook, halfpage
33
MGS198
IL (mA) 5.5
I bias (A) 31
4.5
29 3.5
2.5 2 3 4 VDD (V) 5
27 2 3 4 VDD (V) 5
Tamb = 25 C.
Fig.6
Minimum load current as a function of the supply voltage.
Fig.7
Typical bias current as a function of the supply voltage.
1999 Apr 12
10
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
PCF5078
handbook, halfpage
1.0
MGS199
TC (mV/K) 0.8
0.6
0.4
0.2 2 3 4 VDD (V) 5
Fig.8
Temperature coefficient of the minimum output voltage as a function of the supply voltage.
APPLICATION INFORMATION
antenna handbook, full pagewidth sensor PA RF
D1
D2 R2 1 k R1 1 k
VC
1
8
VDD C2 2.2 to 10 nF
C1 <50 pF
VINT
2
7
VHOME C3 22 to 82 pF
PCF5078
VS1 3 6 VDAC
0.2 to 2.5 V VS2 VSS
4
5
AUXDAC3
PCF5073x
MGS201
Fig.9 Application diagram for mobile station with PA protection against mismatching.
1999 Apr 12
11
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
PCF5078
andbook, halfpage andbook, halfpage
VDD
Vhome VOLTAGE GENERATION R3 50 k 7 VHOME
VVHOME
Vhome VOLTAGE GENERATION R3 50 k 7 VHOME
R(2)
VVHOME C(1)
PCF5078
MGS204
C(1)
R(2)
PCF5078
MGS203
(1) C = 22 to 82 pF. V VHOME (2) R = ------------------------------------------- x R3 V home - V VHOME
(1) C = 22 to 82 pF. V DD - V VHOME (2) R = ------------------------------------------- x R3 V VHOME - V home
Fig.10 Suggested method to force externally VVHOME < Vhome.
Fig.11 Suggested method to force externally VVHOME > Vhome.
handbook, halfpage
PCF5078
1
VC
700
120 pF
MGS202
Fig.12 Typical output load on pin VC.
1999 Apr 12
12
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BGY241
IC1 1 RFIN 2 VC 3 VS 4 RFOUT 5 GND P1 C6 39 pF VBATT D1(1)
1 2
Philips Semiconductors
handbook, full pagewidth
Power amplifier controller for GSM and PCN systems
RFin
1
COUPLER
P2 3 P4 C7 39 pF R3 47
2
RFout
P3 R9 1.5 k
6 2
HY1 5 GND
4 GND
D2(1)
1
C11 330 F
C5 39 pF TR1 3 BC858 2 C20 68 nF C8 68 pF
1
13
VBATT VOUT C16 6.8 F BYPASS C1 1 F 3 5 GND 2 GND
MGS205
VC R1 1 k R7 1 k C13 27 pF VINT VS1 VS2
1 2
8 7
VDD VHOME VDAC VSS
4
6
VIN R23 100 k C18 1 F
TK11230
IC5 1 CTL
PCF5078
3 4 6 5
R16 2.2 k
AUXDAC3 of PCF5073x
TXON
Product specification
PCF5078
(1) D1 and D2: type BAT62_03W
Fig.13 Application example of PCF5078.
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
PACKAGE OUTLINE TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm
PCF5078
SOT505-1
D
E
A
X
c y HE vMA
Z
8
5
A2 pin 1 index
A1
(A3)
A
Lp L
1
e bp
4
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.10 A1 0.15 0.05 A2 0.95 0.80 A3 0.25 bp 0.45 0.25 c 0.28 0.15 D(1) 3.10 2.90 E(2) 3.10 2.90 e 0.65 HE 5.10 4.70 L 0.94 Lp 0.70 0.40 v 0.1 w 0.1 y 0.1 Z(1) 0.70 0.35 6 0
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT505-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-04-09
1999 Apr 12
14
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.
PCF5078
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1999 Apr 12
15
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, SQFP PLCC(3), SO, SOJ not suitable suitable(2) suitable not recommended(3)(4) not recommended(5) suitable suitable suitable suitable suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes
PCF5078
REFLOW(1)
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1999 Apr 12
16
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
NOTES
PCF5078
1999 Apr 12
17
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
NOTES
PCF5078
1999 Apr 12
18
Philips Semiconductors
Product specification
Power amplifier controller for GSM and PCN systems
NOTES
PCF5078
1999 Apr 12
19
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465008/00/01/pp20
Date of release: 1999 Apr 12
Document order number:
9397 750 04997

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